|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
2N2894DCSM MECHANICAL DATA Dimensions in mm (inches) DUAL HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FEATURES 4.32 0.13 (0.170 0.005) 2.29 0.20 (0.09 0.008) 1.65 0.13 (0.065 0.005) 0.64 0.08 (0.025 0.003) 1.40 0.15 (0.055 0.006) 2.54 0.13 (0.10 0.005) 2 1 3 4 5 * SILICON PLANAR EPITAXIAL DUAL PNP TRANSISTOR * HERMETIC CERAMIC SURFACE MOUNT PACKAGE * SCREENING OPTIONS AVAILABLE * HIGH SPEED, LOW SATURATION SWITCH A 6 0.23 rad. (0.009) 1.27 0.13 (0.05 0.005) 6.22 0.13 (0.245 0.005) A= LCC2 PACKAGE Underside View PAD 1 - Collector 1 PAD 2 - Base 1 PAD 3 - Base 2 PAD 4 - Collector 2 PAD 5 - Emitter 2 PAD 6 - Emitter 1 APPLICATIONS: Hermetically sealed dual surface mount version of the popular 2N2894 for high reliability applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO VCEO VEBO IC PD PD TSTG , TJ Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Total Device Dissipation Total Device Dissipation @ TA =25C Derate above 25C @ TC =25C Derate above 25C Operating and Storage Temperature Range -12V -12V -4V 200mA 360mW 2.06mW / C 1.2W 6.85mW / C -65 to +200C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 8/99 2N2894DCSM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter V(BR)CBO* V(BR)CEO V(BR)EBO ICBO ICES VCE(sat) Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Collector - Emitter Saturation Voltage Test Conditions IC = 10mA IE = 10mA VCB = -6V VBE = 0 IC = -10mA IC = -30mA IC = -100mA IC = -10mA IE = 0 IB = 0 IC = 0 Tamb = 125C VCE = -6V IB = -1mA IB = -3mA IB = -10mA IB = -1mA IB = -3mA IB = -10mA VCE = -0.3V VCE = -0.5V VCE = -1V VCE = -0.5V Tamb = 125C f = 100MHz IC = 0 IC = 0 VCE = -2V VCE = -2V Min. - 12 - 12 -4 Typ. Max. Unit V - 10 - 80 -0.15 -0.20 - 0.50 V Collector - Emitter Breakdown Voltage IC = 10mA nA -0.78 -0.85 30 40 25 17 400 -0.98 -1.2. -1.7 150 --- V VBE(sat) Base - Emitter On Voltage IC = -30mA IC = -100mA IC = -10mA IC = -30mA hFE DC Current Gain IC = -100mA IC = -30mA VCE = -10V IC = -30mA VEB = -5V f = 1MHz VCB = -5V f = 1MHz IC = -30mA IB2 = -1.5mA IC = -30mA fT Cebo Ccbo ton toff Current Gain Bandwidth Product Emitter - Base - Capacitance Collector - Base - Capacitance Turn on Time MHz 6 6 60 9 pF pF ns ns Turn off Time IB1 = IB2= -1.5mA * Pulse Test: tp 300ms, d 2%. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 8/99 |
Price & Availability of 2N2894DCSM |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |